碳化硅MOSFET-三安集成

简介

优异的开关和高温直流特性

碳化硅MOSFET是下一代能量转换系统的核心部件，实现了关键的系统优势，例如小型化、更轻的重量和更高的集成度。三安集成整合全球科研智慧和本地大规模量产经验进行碳化硅MOSFET技术研发，制造的传统挑战，例如低电阻欧姆接触、离子注入/退火中适当激活的掺杂剂以及优化的栅极氧化等都已得到解决。通过自主掌握众多核心技术，三安集成目前已经推出工业级1200V 80mΩ 碳化硅MOSFET量产平台。

Part Number	Product Status	Type	Qualification	VDS(max) (V)	ID (A)	RDS(on)@Tj=25℃(mΩ)	RDS(on)@Tj=175℃(mΩ)	Tj (max)(℃)	Package
SMS0650040M	Evaluation	SiC MOSFETs Discrete device	Industry	650	17.6	34	35	175	TO-247-4
AMS0650060M	Evaluation	SiC MOSFETs Discrete device	Automotive	650	13.2	60	78	175	TO-247-4
SMS1701000P	Evaluation	SiC MOSFETs Discrete device	Industry	1700	2	700	1500	175	TO-263-7
AMS1701000K	Evaluation	SiC MOSFETs Discrete device	Industry	1700	2	700	1500	175	TO-247-3L
SMS1701000K	Active	SiC MOSFETs Discrete device	Industry	1700	2	700	1500	175	TO-247-3
AMS1200075P2	Evaluation	SiC MOSFETs Discrete device	Automotive	1200	20	68	115	175	TO-263-7
AMS1200075K2	Evaluation	SiC MOSFETs Discrete device	Automotive	1200	20	68	115	175	TO-247-3
AMS1200075M2	Evaluation	SiC MOSFETs Discrete device	Automotive	1200	20	68	115	175	TO-247-4
SMS1200075M2	Evaluation	SiC MOSFETs Discrete device	Industry	1200	20	68	115	175	TO-247-4
AMS1200032M2	Evaluation	SiC MOSFETs Discrete device	Automotive	650	40	28	45	175	TO-247-4
SMS1200032M2	Evaluation	SiC MOSFETs Discrete device	Industry	1200	40	28	45	175	TO-247-4
SMS1200080M	Evaluation	SiC MOSFETs Discrete device	Industry	1200	20	75	120	150	TO-247-4
SMS1200080K	Evaluation	SiC MOSFETs Discrete device	Industry	1200	20	75	120	150	TO-247-3
SMS1200020M2	Evaluation	SiC MOSFETs Discrete device	Industry	1200	50	20	35	175	TO-247-4