简介
相关文档
相关应用
碳化硅MOSFET是下一代能量转换系统的核心部件,实现了关键的系统优势,例如小型化、更轻的重量和更高的集成度。三安集成整合全球科研智慧和本地大规模量产经验进行碳化硅MOSFET技术研发,制造的传统挑战,例如低电阻欧姆接触、离子注入/退火中适当激活的掺杂剂以及优化的栅极氧化等都已得到解决。通过自主掌握众多核心技术,三安集成目前已经推出工业级1200V 80mΩ 碳化硅MOSFET量产平台。
Part Number
|
Product Status |
Type |
Qualification |
VDS(max) (V) |
ID (A) |
RDS(on)@Tj=25℃(mΩ) |
RDS(on)@Tj=175℃(mΩ) |
Tj (max)(℃) |
Package |
---|---|---|---|---|---|---|---|---|---|
SMS0650040M |
Evaluation | SiC MOSFETs Discrete device | Industry | 650 | 17.6 | 34 | 35 | 175 | TO-247-4 |
AMS0650060M |
Evaluation | SiC MOSFETs Discrete device | Automotive | 650 | 13.2 | 60 | 78 | 175 | TO-247-4 |
SMS1701000P |
Evaluation | SiC MOSFETs Discrete device | Industry | 1700 | 2 | 700 | 1500 | 175 | TO-263-7 |
AMS1701000K |
Evaluation | SiC MOSFETs Discrete device | Industry | 1700 | 2 | 700 | 1500 | 175 | TO-247-3L |
SMS1701000K |
Active | SiC MOSFETs Discrete device | Industry | 1700 | 2 | 700 | 1500 | 175 | TO-247-3 |
AMS1200075P2 |
Evaluation | SiC MOSFETs Discrete device | Automotive | 1200 | 20 | 68 | 115 | 175 | TO-263-7 |
AMS1200075K2 |
Evaluation | SiC MOSFETs Discrete device | Automotive | 1200 | 20 | 68 | 115 | 175 | TO-247-3 |
AMS1200075M2 |
Evaluation | SiC MOSFETs Discrete device | Automotive | 1200 | 20 | 68 | 115 | 175 | TO-247-4 |
SMS1200075M2 |
Evaluation | SiC MOSFETs Discrete device | Industry | 1200 | 20 | 68 | 115 | 175 | TO-247-4 |
AMS1200032M2 |
Evaluation | SiC MOSFETs Discrete device | Automotive | 650 | 40 | 28 | 45 | 175 | TO-247-4 |
SMS1200032M2 |
Evaluation | SiC MOSFETs Discrete device | Industry | 1200 | 40 | 28 | 45 | 175 | TO-247-4 |
SMS1200080M |
Evaluation | SiC MOSFETs Discrete device | Industry | 1200 | 20 | 75 | 120 | 150 | TO-247-4 |
SMS1200080K |
Evaluation | SiC MOSFETs Discrete device | Industry | 1200 | 20 | 75 | 120 | 150 | TO-247-3 |
SMS1200020M2 |
Evaluation | SiC MOSFETs Discrete device | Industry | 1200 | 50 | 20 | 35 | 175 | TO-247-4 |