SAIC provides wide bandgap material semiconductor power electronic device technology such as Gallium Nitride (GaN) and Silicon Carbide (SiC),these give our costumer more choices in circuit/system design of power conversion technology. This features enable higher switching frequency, higher efficiency, and higher power density compare to Silicon MOSFETs and IGBTs. SanAn's GaN E-HEMT and SiC SBD/MOSFET technologies target serving consumer and industrial applications such as adapter/charger, telecom/server SMPS, wireless power, on board charger(OBC) with cost effective solutions.