Introduction
Products
The wireless infrastructure is rapidly spreading into a heterogeneous network composed of macro base stations, urban base stations, micro base stations and massive MIMO AAS. Operators worldwide have deployed 4G base stations in frequency bands up to 6 GHz. The rapidly expanding demand makes network service providers need to find reliable and flexible solutions to support them in fulfilling the complex and diverse needs.
Sanan IC is a vertically integrated manufacturing service platform. It continues to expand the production capacity of Silicon Carbide, Gallium Nitride and Gallium Arsenide to meet future market demands. Our complete product portfolio aims to support all cellular standards and frequency bands, further extend system capabilities of 4G network and implement next-generation of 5G network through advanced Silicon Carbide, Gallium Nitride power solutions and Gallium Arsenide RF solutions.
Human society proposes greater demands for cross-platform, system and application connections every day, and 5G is ready for implementing this blueprint. In order to give full play to the performance of 5G, the world needs more and more advanced electronic components that can withstand higher operating temperature, faster speed, simplified configuration, and lighter weight to provide longer-term reliability and superior energy efficiency. The Gen-3 semiconductor is a solution proposed by Sanan IC under inspiration of such demands.
Sanan IC offers GaAs HBT process technologies for different applications to meet the various needs of wireless communications.
Sanan IC technologies help enable products across a wide range of applications from handheld wireless communications to 5G IoT devices.
3G/4G/Wi-Fi PA, Gain Block
Walkei-talkie, 2G PA
With a wide range of applications using GaAs pHEMT processes Sanan IC technologies help enable producstacross a wide frequency range covering up to the Ka band. Such diversified products are developed to meet the various market needs.
Variable-shaped electron beam (e-beam) is applied to implement the 0.15μm T-gate process technology, which yields good wafer-to-wafer consistency, abundant production capacity, and the ability to extend to smaller line widths.
PA/Gain Block
LNA/Logic/RF Swith/PA
Part Number
|
Type
|
Voltage (V)
|
IF (A)
|
Generation
|
VF@Tj=25℃ (V）
|
VF@Tj=175℃ (V）
|
IFSM@Tc=25℃ (A)
|
IR max@Tj=25℃ (uA）
|
Tj(℃)
|
Package
|
Qualification
|
|---|---|---|---|---|---|---|---|---|---|---|---|
|
SDS065J002D2 
|
SBD | 650 | 2 @Tc=155℃ | Gen-2 | 1.4 | 1.75 | 22 | 10 | -55~175 | TO252-2 | 工业级 |
|
SDS065J002C2
|
SBD | 650 | 2 @Tc=155℃ | Gen-2 | 1.4 | 1.75 | 22 | 10 | -55~175 | TO220-2 | 工业级 |
|
SDS065J004D2
|
SBD | 650 | 4 @Tc=156℃ | Gen-2 | 1.4 | 1.8 | 34 | 15 | -55~175 | TO252-2 | 工业级 |
|
SDS065J004C2
|
SBD | 650 | 4 @Tc=156℃ | Gen-2 | 1.4 | 1.8 | 34 | 15 | -55~175 | TO220-2 | 工业级 |
|
SDS065J006N2
|
SBD | 650 | 6 @Tc=155℃ | Gen-2 | 1.4 | 1.75 | 54 | 20 | -55~175 | TO220N-2 | 工业级 |
|
SDS065J006E2
|
SBD | 650 | 6 @Tc=155℃ | Gen-2 | 1.4 | 1.8 | 54 | 20 | -55~175 | TO263-2 | 工业级 |
|
SDS065J006D2
|
SBD | 650 | 6 @Tc=155℃ | Gen-2 | 1.4 | 1.75 | 54 | 20 | -55~175 | TO252-2 | 工业级 |
|
SDS065J006C2
|
SBD | 650 | 6 @Tc=155℃ | Gen-2 | 1.4 | 1.75 | 54 | 20 | -55~175 | TO220-2 | 工业级 |
|
SDS065J008E2
|
SBD | 650 | 8 @Tc=151℃ | Gen-2 | 1.4 | 1.75 | 64 | 25 | -55~175 | TO263-2 | 工业级 |
|
SDS065J008D2
|
SBD | 650 | 8 @Tc=153℃ | Gen-2 | 1.5 | 1.9 | 65 | 25 | -55~175 | TO252-2 | 工业级 |
|
SDS065J008C2
|
SBD | 650 | 8 @Tc=153℃ | Gen-2 | 1.4 | 1.75 | 64 | 25 | -55~175 | TO220-2 | 工业级 |
|
SDS065J010N2
|
SBD | 650 | 10 @Tc=151℃ | Gen-2 | 1.45 | 1.75 | 80 | 40 | -55~175 | TO220N-2 | 工业级 |
|
SDS065J010F2
|
SBD | 650 | 10 @Tc=151℃ | Gen-2 | 1.45 | 1.75 | 80 | 40 | -55~175 | TO220F-2 | 工业级 |
|
SDS065J010E2
|
SBD | 650 | 10 @Tc=151℃ | Gen-2 | 1.45 | 1.8 | 80 | 40 | -55~175 | TO263-2 | 工业级 |
|
SDS065J010D2
|
SBD | 650 | 10 @Tc=151℃ | Gen-2 | 1.45 | 1.75 | 80 | 40 | -55~175 | TO252-2 | 工业级 |
|
SDS065J010C2
|
SBD | 650 | 10 @Tc=151℃ | Gen-2 | 1.45 | 1.75 | 80 | 40 | -55~175 | TO220-2 | 工业级 |
|
SDS065J010G2
|
SBD | 650 | 5/10 @Tc=155℃ | Gen-2 | 1.35 | 1.6 | 51* | 20 | -55~175 | TO247-3 | 工业级 |
|
SDS065J012C2
|
SBD | 650 | 12 @Tc=151℃ | Gen-2 | 1.45 | 1.75 | 96 | 35 | -55~175 | TO220-2 | 工业级 |
|
SDS065J016H2
|
SBD | 650 | 16 @Tc=147℃ | Gen-2 | 1.4 | 1.7 | 136 | 40 | -55~175 | TO247-2 | 工业级 |
|
SDS065J016C2
|
SBD | 650 | 16 @Tc=147℃ | Gen-2 | 1.4 | 1.7 | 136 | 40 | -55~175 | TO220-2 | 工业级 |
|
SDS065J020G2
|
SBD | 650 | 10/20 @Tc=147℃ | Gen-2 | 1.45 | 1.75 | 80* | 40 | -55~175 | TO247-3 | 工业级 |
|
SDS065J020H2
|
SBD | 650 | 20 @Tc=148℃ | Gen-2 | 1.4 | 1.6 | 165 | 50 | -55~175 | TO247-2 | 工业级 |
|
SDS065J020F2
|
SBD | 650 | 13 @Tc=135℃ | Gen-2 | 1.4 | 1.6 | 180 | 50 | -55~175 | TO220F-2 | 工业级 |
|
SDS065J020C2
|
SBD | 650 | 20 @Tc=152℃ | Gen-2 | 1.4 | 1.6 | 180 | 50 | -55~175 | TO220-2 | 工业级 |
|
SDS065J030G2
|
SBD | 650 | 15/30 @Tc=147℃ | Gen-2 | 1.4 | 1.6 | 136* | 50 | -55~175 | TO247-3 | 工业级 |
|
SDS065J040G2
|
SBD | 650 | 20/40 @Tc=144℃ | Gen-2 | 1.4 | 1.6 | 180* | 50 | -55~175 | TO247-3 | 工业级 |
|
SDS065J060A
|
SBD | 650 | 60 @Tc=123℃ | Gen-2 | 1.45 | 1.7 | 480 | 150 | -55~175 | SOT227 | 工业级 |
|
SDS065J080A
|
SBD | 650 | 80 @Tc=122℃ | Gen-2 | 1.45 | 1.7 | 640 | 200 | -55~175 | SOT227 | 工业级 |
|
SDS065J100A
|
SBD | 650 | 100 @Tc=120℃ | Gen-2 | 1.45 | 1.7 | 800 | 200 | -55~175 | SOT227 | 工业级 |
|
SDS120J002D2
|
SBD | 1200 | 2 @Tc=155℃ | Gen-2 | 1.4 | 2.05 | 27 | 10 | -55~175 | TO252-2 | 工业级 |
