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Base Station

Introduction

Products

5656.jpg

RF front-end devices for macro base stations and small base stations in mobile communication networks

The wireless infrastructure is rapidly spreading into a heterogeneous network composed of macro base stations, urban base stations, micro base stations and massive MIMO AAS. Operators worldwide have deployed 4G base stations in frequency bands up to 6 GHz. The rapidly expanding demand makes network service providers need to find reliable and flexible solutions to support them in fulfilling the complex and diverse needs.

Sanan IC is a vertically integrated manufacturing service platform. It continues to expand the production capacity of Silicon Carbide, Gallium Nitride and Gallium Arsenide to meet future market demands. Our complete product portfolio aims to support all cellular standards and frequency bands, further extend system capabilities of 4G network and implement next-generation of 5G network through advanced Silicon Carbide, Gallium Nitride power solutions and Gallium Arsenide RF solutions.

Human society proposes greater demands for cross-platform, system and application connections every day, and 5G is ready for implementing this blueprint. In order to give full play to the performance of 5G, the world needs more and more advanced electronic components that can withstand higher operating temperature, faster speed, simplified configuration, and lighter weight to provide longer-term reliability and superior energy efficiency. The Gen-3 semiconductor is a solution proposed by Sanan IC under inspiration of such demands.


Products

RF Technology(2)

HBT

Sanan IC offers GaAs HBT process technologies for different applications to meet the various needs of wireless communications.

Sanan IC technologies help enable products across a wide range of applications from handheld wireless communications to 5G IoT devices.


H20HG2

3G/4G/Wi-Fi PA, Gain Block

H20HG6

Walkei-talkie, 2G PA

p-HEMT

With a wide range of applications using GaAs pHEMT processes Sanan IC technologies help enable producstacross a wide frequency range covering up to the Ka band. Such diversified products are developed to meet the various market needs.

Variable-shaped electron beam (e-beam) is applied to implement the 0.15μm T-gate process technology, which yields good wafer-to-wafer consistency, abundant production capacity, and the ability to extend to smaller line widths.


P25ED3

PA/Gain Block

P25ED5

LNA/Logic/RF Swith/PA

Power Electronics(30)

Part Number
Type
Voltage (V)
IF (A)
Generation
VF@Tj=25℃ (V)
VF@Tj=175℃ (V)
IFSM@Tc=25℃ (A)
IR max@Tj=25℃ (uA)
Tj(℃)
Package
Qualification

SDS065J002D2

SBD 650 2 @Tc=155℃ Gen-2 1.4 1.75 22 10 -55~175 TO252-2 工业级

SDS065J002C2

SBD 650 2 @Tc=155℃ Gen-2 1.4 1.75 22 10 -55~175 TO220-2 工业级

SDS065J004D2

SBD 650 4 @Tc=156℃ Gen-2 1.4 1.8 34 15 -55~175 TO252-2 工业级

SDS065J004C2

SBD 650 4 @Tc=156℃ Gen-2 1.4 1.8 34 15 -55~175 TO220-2 工业级

SDS065J006N2

SBD 650 6 @Tc=155℃ Gen-2 1.4 1.75 54 20 -55~175 TO220N-2 工业级

SDS065J006E2

SBD 650 6 @Tc=155℃ Gen-2 1.4 1.8 54 20 -55~175 TO263-2 工业级

SDS065J006D2

SBD 650 6 @Tc=155℃ Gen-2 1.4 1.75 54 20 -55~175 TO252-2 工业级

SDS065J006C2

SBD 650 6 @Tc=155℃ Gen-2 1.4 1.75 54 20 -55~175 TO220-2 工业级

SDS065J008E2

SBD 650 8 @Tc=151℃ Gen-2 1.4 1.75 64 25 -55~175 TO263-2 工业级

SDS065J008D2

SBD 650 8 @Tc=153℃ Gen-2 1.5 1.9 65 25 -55~175 TO252-2 工业级

SDS065J008C2

SBD 650 8 @Tc=153℃ Gen-2 1.4 1.75 64 25 -55~175 TO220-2 工业级

SDS065J010N2

SBD 650 10 @Tc=151℃ Gen-2 1.45 1.75 80 40 -55~175 TO220N-2 工业级

SDS065J010F2

SBD 650 10 @Tc=151℃ Gen-2 1.45 1.75 80 40 -55~175 TO220F-2 工业级

SDS065J010E2

SBD 650 10 @Tc=151℃ Gen-2 1.45 1.8 80 40 -55~175 TO263-2 工业级

SDS065J010D2

SBD 650 10 @Tc=151℃ Gen-2 1.45 1.75 80 40 -55~175 TO252-2 工业级

SDS065J010C2

SBD 650 10 @Tc=151℃ Gen-2 1.45 1.75 80 40 -55~175 TO220-2 工业级

SDS065J010G2

SBD 650 5/10 @Tc=155℃ Gen-2 1.35 1.6 51* 20 -55~175 TO247-3 工业级

SDS065J012C2

SBD 650 12 @Tc=151℃ Gen-2 1.45 1.75 96 35 -55~175 TO220-2 工业级

SDS065J016H2

SBD 650 16 @Tc=147℃ Gen-2 1.4 1.7 136 40 -55~175 TO247-2 工业级

SDS065J016C2

SBD 650 16 @Tc=147℃ Gen-2 1.4 1.7 136 40 -55~175 TO220-2 工业级

SDS065J020G2

SBD 650 10/20 @Tc=147℃ Gen-2 1.45 1.75 80* 40 -55~175 TO247-3 工业级

SDS065J020H2

SBD 650 20 @Tc=148℃ Gen-2 1.4 1.6 165 50 -55~175 TO247-2 工业级

SDS065J020F2

SBD 650 13 @Tc=135℃ Gen-2 1.4 1.6 180 50 -55~175 TO220F-2 工业级

SDS065J020C2

SBD 650 20 @Tc=152℃ Gen-2 1.4 1.6 180 50 -55~175 TO220-2 工业级

SDS065J030G2

SBD 650 15/30 @Tc=147℃ Gen-2 1.4 1.6 136* 50 -55~175 TO247-3 工业级

SDS065J040G2

SBD 650 20/40 @Tc=144℃ Gen-2 1.4 1.6 180* 50 -55~175 TO247-3 工业级

SDS065J060A

SBD 650 60 @Tc=123℃ Gen-2 1.45 1.7 480 150 -55~175 SOT227 工业级

SDS065J080A

SBD 650 80 @Tc=122℃ Gen-2 1.45 1.7 640 200 -55~175 SOT227 工业级

SDS065J100A

SBD 650 100 @Tc=120℃ Gen-2 1.45 1.7 800 200 -55~175 SOT227 工业级

SDS120J002D2

SBD 1200 2 @Tc=155℃ Gen-2 1.4 2.05 27 10 -55~175 TO252-2 工业级

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