Sanan IC provides advanced microwave and RF wafer process technologies, namely HBT, pHEMT, IPD and PIN. Together these form an industry-leading portfolio of RF and millimeter wave process technologies covering a broad spectrum, and providing an advanced, convenient RF technology manucturing platform and services to accelerate product development.
A newly launched 1200V 80mΩ SiC MOSFET has been developed which passed a series of device performance and reliability tests. The device is widely adopted in solar photovoltaic (PV) inverters, switching power supplies, pulse power supplies, high voltage DC/DC converters, EV chargers and motor drives. It is a critical component which helps reduce size andvolume, lower power consumption and improve power density of energy systems.
DFB is one of the best laser devices for the deployment requirements of massive optical modules in 5G, data center and mobile communication network. At present, the 25G DFB independently developed by Sanan IC has passed the verification of international customers and started to mass production.
Sanan IC's technologies narrow the space and time distance of people, and also inspire the responsiveness and creativeness of people. We are working together with the industry's top engineers, manufacturing experts and dreamers to make the world a better place with our compound semiconductor technologies.