By the end of 2024, the global total deployment of 5G base stations reached 6.37 million units. The Chinese market has played a significant role in this progress. 5G base stations have introduced Massive MIMO technology, using 32T32R and 64T64R RF units to cover mid-frequency application demands in the 3-6GHz band. This enables users to enjoy high-speed uplink and downlink wireless communication experiences even in densely populated areas such as office buildings and stadiums.
Based on an average single-channel power of 5-10W, the RF front-end systems of base stations typically operate in scenarios with 300W and higher power, imposing stricter requirements on the high-frequency, high-power, and heat dissipation characteristics of RF devices. Wide-bandgap compound semiconductors like GaN demonstrate significant advantages in RF chips manufacturing.
With specialization in compound semiconductor development and technology iteration for RFFE chips, we pursue the highest possible performance and efficiency in RF devices and modules.
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Proven mass-production excellence and process control for mission-critical wireless industry.