The evolution of communication standards and RFFE architectures helps smartphones provide users with efficient and seamless connectivity even in complex scenarios or remote areas. GaAs PA, with its excellent efficiency and integration, remain the mainstream choice in wireless communication terminals.
Sanan has developed HBT and pHEMT technology platforms based on GaAs. Aiming at the wireless communication demands of cellular networks and infrastructure in complex scenarios, we develop customizied GaAs epitaxy to enhance efficiency and stability of PA devices. Focusing on application requirements, the company combines technology leadership, mature mass-production experience, and system level expertise to help customers address complex technical challenges.
Entry Level
InGaP HBT
2G TxM, 3/4G PA.
Entry Level
InGaP HBT
2G TxM, 3/4G PA, with High Ruggedness.
Eco. Level
InGaP DHBT
Wi-Fi PA, Low Beta. [75]
Eco. Level
InGaP DHBT
LTE-A / 5G HPUE PA, Wi-Fi PA, High Beta. [140]
Adv. Level
InGaP DHBT
5G-A / Wi-Fi 6e/7 PA, with Superior Ruggedness.
0.25um E + 0.5um D
LNA, Switches , ESD, WiFi & Base Station.
Flip-Chip with Optimized Parasitic Parameter and Heat Dissipation.
For RLC Passive Design.
High Q: 1+4+4.
Normal: 1+2+4.
i-layer 1.2µm for Switch and Limiter.
