The evolution of communication standards and RFFE architectures helps smartphones provide users with efficient and seamless connectivity even in complex scenarios or remote areas. GaAs PA, with its excellent efficiency and integration, remain the mainstream choice in wireless communication terminals.
Sanan has developed HBT and pHEMT technology platforms based on GaAs. Aiming at the wireless communication demands of cellular networks and infrastructure in complex scenarios, we develop customizied GaAs epitaxy to enhance efficiency and stability of PA devices. Focusing on application requirements, the company combines technology leadership, mature mass-production experience, and system level expertise to help customers address complex technical challenges.
InGaP HBT
2G TxM, 3/4G PA, with High Rug.
