The global deployment of 5G cellular networks has driven the transformation of communication base stations from RRH to AAS, increasing the number of RF links in base stations to support smooth experiences for more users within the coverage area. GaN-on-SiC RF PA feature high energy efficiency and thermal conductivity at high frequencies, making them widely used in 128T128R AAS deployments for 5G network advancement and FR3 frequency band deployments under 6G networks.
Sanan has developed an GaN HEMT technology platform with technology nodes reaching 0.12μm. We boasts excellent process maturity and scarce domestic mass-production capabilities for 4-inch GaN-on-SiC wafers, focusing on PA demands in Massive MIMO scenarios for civil base stations. This helps customers rapidly deploy infrastructure networks and accelerate the iteration of wireless communication experiences.
DC-5GHz, for 4/5G BTS, CATV.
DC-6GHz, 6-18 GHz, for 5G BTS, SatCom, V-SAT.
18-50GHz, for 5G BTS (mmW bands) , K，Ka-band.
