Wide Band Gap power devices make your electric-vehicle energy system lead the industry
Nowadays, electric vehicles appear more and more frequently on the street, and the power chips in their power systems are becoming more and more important. Sanan IC has gradually deployed Wide Band Gap semiconductors, including a product portfolio of Silicon Carbide and Gallium Nitride, for supporting the design of high-voltage, high-current and high-temperature systems to help designers for competitive and efficient vehicles required by the market.
The Silicon Carbide MOSFET platform provided by Sanan IC continues to support the transformation of electric vehicles from silicon to Silicon Carbide. The power system of electric vehicles is no longer limited by silicon devices, instead, can enjoy the faster switching speed and higher power density achieved by Silicon Carbide MOSFETs and SBD diodes, thereby allowing smaller, lighter, and more efficient motors. It can reduce power loss by nearly 80% and extend driving distance by 10%, thereby relieving consumers' "range anxiety".
Three Mega Fabs provide a total annual output of more than 100,000 wafers provide a steady stream of capacity for compound semiconductor industry. Wafer process technology is heading for 200mm from 150mm, which further improves cost-effectiveness of large-scale manufacturing.
Covering the entire industry chain from crystal materials to device packaging, serving customers with 20 years of compound semiconductor large-scale manufacturing experience, and providing flexible and diverse business cooperation models.
Sanan IC implements quality management system of international standards, has passed the IATF 16949 system certification, and is also a member of JEDEC. Its products have been safely operated on Clients for more than 200 billion hours.
