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The Silicon Carbide (SiC) MOSFET is the core component of next-generation power conversion systems. It enables key system benefits like miniaturization, lighter weight, and increased integration. Sanan IC develops SiC MOSFET technology through the integration of global scientific research and local large-scale manufacturing experience. Conventional challenges of SiC MOSFET manufacturing such as low resistivity ohmic contacts, properly activated dopants from ion implantation/anneal, and optimized gate oxidation have been addressed. Through independently developing multiple core technologies, Sanan IC has launched an industrial grade 1200V, 80mΩ SiC MOSFET mass production platform.
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