Sanan IC provides RF process technologies, mainly HBT and p-HEMT, together forming an industry-leading and complete portfolio across the RF and millimeter wave spectrum.
Sanan IC provides RF advanced technologies, mainly HBT and p-HEMT, together forming an industry-leading and complete portfolio across the RF and millimeter wave spectrum.
Sanan IC focuses on compound semiconductor materials. Its process technologies, which include more than a dozen GaAs HBT and PHEMT processes, are being used for mass production to meet the various needs of wireless communications. Sanan IC will continue to introduce diversified technologies to serve its customers.
Sanan IC offers GaAs HBT process technologies for different applications to meet the various needs of wireless communications.
Sanan IC technologies help enable products across a wide range of applications from handheld wireless communications to 5G IoT devices.
3G/4G/Wi-Fi PA, Gain Block
Walkei-talkie, 2G PA
3G/4G/Wi-Fi PA/Sub-6G/TX module,
Small Cell PA
With a wide range of applications using GaAs pHEMT processes Sanan IC technologies help enable producstacross a wide frequency range covering up to the Ka band. Such diversified products are developed to meet the various market needs.
Variable-shaped electron beam (e-beam) is applied to implement the 0.15μm T-gate process technology, which yields good wafer-to-wafer consistency, abundant production capacity, and the ability to extend to smaller line widths.
PA/Gain Block
LNA/Logic/RF Swith/PA
LNA/Logic/RF Switch
RF Switch