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RF Advanced Process

Sanan IC provides RF process technologies, mainly HBT and p-HEMT, together forming an industry-leading and complete portfolio across the RF and millimeter wave spectrum.

Sanan IC provides RF advanced technologies, mainly HBT and p-HEMT, together forming an industry-leading and complete portfolio across the RF and millimeter wave spectrum.

Sanan IC focuses on compound semiconductor materials. Its process technologies, which include more than a dozen GaAs HBT and PHEMT processes, are being  used for mass production to meet the various needs of wireless communications. Sanan IC will continue to introduce diversified technologies to serve its customers.


HBT

Sanan IC offers GaAs HBT process technologies for different applications to meet the various needs of wireless communications.

Sanan IC technologies help enable products across a wide range of applications from handheld wireless communications to 5G IoT devices.


H20HG2

3G/4G/Wi-Fi PA, Gain Block

H20HG6

Walkei-talkie, 2G PA

H20HG7

3G/4G/Wi-Fi PA/Sub-6G/TX module,

H20HP1

Small Cell PA

p-HEMT

With a wide range of applications using GaAs pHEMT processes Sanan IC technologies help enable producstacross a wide frequency range covering up to the Ka band. Such diversified products are developed to meet the various market needs.

Variable-shaped electron beam (e-beam) is applied to implement the 0.15μm T-gate process technology, which yields good wafer-to-wafer consistency, abundant production capacity, and the ability to extend to smaller line widths.


P25ED3

PA/Gain Block

P25ED5

LNA/Logic/RF Swith/PA

P15LN2

LNA/Logic/RF Switch

P10PA1

RF Switch

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