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SiC Schottky Barrier Diode

Introduction

Products

Documents

Applications

Superior Surge And Avalanche Characteristics

Sanan IC has a mature product portfolio of Silicon Carbide Schottky Barrier Diodes (SBDs). Utilizing an innovating merged PiN Schottky (MPS) structure and substrate thinning technology, the SiC SBD offers compelling price-performance while meeting the industry’s most stringent reliability requirements like HV-H3TRB. Built upon the 20-year foundation of Sanan Optoelectronics compound semiconductor excellence, Sanan IC delivers world class SiC SBD manufacturing with extremely low field failure rates.  Leveraging a complete vertical integration (front- and back-end) and comprehensive online and reliability testing services, Sanan IC offers true “one-stop customer service solutions” to the power electronics industry.

Products

Part Number
Type
Voltage (V)
IF (A)
Generation
VF@Tj=25℃ (V)
VF@Tj=175℃ (V)
IFSM@Tc=25℃ (A)
IR max@Tj=25℃ (uA)
Tj(℃)
Package
Qualification

SDS065J002D2

SBD 650 2 @Tc=155℃ Gen-2 1.4 1.75 22 10 -55~175 TO252-2 工业级

SDS065J002C2

SBD 650 2 @Tc=155℃ Gen-2 1.4 1.75 22 10 -55~175 TO220-2 工业级

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