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Power Electronics

Offer More Efficient Power Conversion Technology For The Realization Of A Sustainable Energy Society

Vertically Integrated Manufacturing Platform of Wide Band Gap Semiconductor

The global trend toward energy savings has promoted the development of next-generation power conversion systems utilizing wide band gap semiconductors primarily Silicon Carbide (SiC) and Gallium Nitride (GaN).  Power devices based on wide bandgap semiconductors operate efficiently at higher voltage, temperature, and switching frequency; thereby enabling smaller, lighter, cooler power conversion systems that are cost-effective as well. Wide bandgap semiconductor devices are generating fundamental changes in many industries like consumer power adapters, datacenter/telecommunication power supplies, electric vehicle (EV) powertrain, renewable energy infrastructure, industrial motor drives, and wireless charging.

Silicon Carbide

Sanan IC offers a wide variety of SiC Schottky diodes (SBD), covering various voltage and current levels, and has built a vertically integrated supply chain to ensure delivery and efficiency of new product introduction.

Sanan IC gathers global scientific research wisdom and local mass production experience to develop SiC MOSFET technology, and has launched an industrial-grade 1200V 80mΩ MOSFET mass production platform.

With more than 20 years of experience in compound semiconductor R & D and manufacturing, Sanan IC uses high-quality substrate to promote technological innovation of compound semiconductors.

Gallium Nitride

Wide Band Gap semiconductor power electronic devices represented by GaN will be the key to new energy-saving world.

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