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Powertrain

Introduction

Products

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Power system from 80W to over 500W

All EV power systems will propel their main vehicle, but how to implement it depends on the designer. He or she tries to design an elegant system that smoothly prompts all motion parts to complete work faster at a lower price and less power consumption. The system with Silicon Carbide MOSFET design can deal with large currents with the industry's lowest drain-source on-resistance (RDS(ON)), thereby increasing the distance consumers can travel with a single charge.


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Silicon Carbide Empowers A New Generation Of On-Board Power Systems

In high-power application scenarios such as on-board charging system, traditional silicon-based power devices have shown their limitations. Sanan IC’s Silicon Carbide power devices have superior high-voltage and high-current working capability, which enables them to cope with more challenging power supply applications.


Up to

70%

Lower Losses

Up to

7%

Larger Range

Up to

50%

Smaller Size

Products

Power Electronics(5)

Part Number
Type
Voltage (V)
IF (A)
Generation
VF@Tj=25℃ (V)
VF@Tj=175℃ (V)
IFSM@Tc=25℃ (A)
IR max@Tj=25℃ (uA)
Tj(℃)
Package
Qualification

ADS065J004C2

SBD 650 4 @Tc=156℃ Gen-2 1.4 1.8 34 15 -55~175 TO220-2 汽车级

ADS065J020C2

SBD 650 20 @Tc=152℃ Gen-2 1.4 1.6 180 50 -55~175 TO220-2 汽车级

ADS065J040G2

SBD 650 20/40 @Tc=144℃ Gen-2 1.4 1.6 180* 50 -55~175 TO247-3 汽车级

ADS120J020H2

SBD 1200 20 @Tc=149℃ Gen-2 1.45 2.2 180 50 -55~175 TO247-2 汽车级

ADS120J040G2

SBD 1200 20/40 @Tc=142℃ Gen-2 1.45 2.2 180* 50 -55~175 TO247-3 汽车级

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