Introduction
Products
All EV power systems will propel their main vehicle, but how to implement it depends on the designer. He or she tries to design an elegant system that smoothly prompts all motion parts to complete work faster at a lower price and less power consumption. The system with Silicon Carbide MOSFET design can deal with large currents with the industry's lowest drain-source on-resistance (RDS(ON)), thereby increasing the distance consumers can travel with a single charge.
Part Number
|
Type |
Voltage (V) |
IF (A) |
Generation |
VF@Tj=25℃ (V) |
VF@Tj=175℃ (V) |
IFSM@Tc=25℃ (A) |
IR max@Tj=25℃ (uA) |
Tj(℃) |
Package |
Qualification |
---|---|---|---|---|---|---|---|---|---|---|---|
ADS065J004C2 |
SBD | 650 | 4 @Tc=156℃ | Gen-2 | 1.4 | 1.8 | 34 | 15 | -55~175 | TO220-2 | 汽车级 |
ADS065J020C2 |
SBD | 650 | 20 @Tc=152℃ | Gen-2 | 1.4 | 1.6 | 180 | 50 | -55~175 | TO220-2 | 汽车级 |
ADS065J040G2 |
SBD | 650 | 20/40 @Tc=144℃ | Gen-2 | 1.4 | 1.6 | 180* | 50 | -55~175 | TO247-3 | 汽车级 |
ADS120J020H2 |
SBD | 1200 | 20 @Tc=149℃ | Gen-2 | 1.45 | 2.2 | 180 | 50 | -55~175 | TO247-2 | 汽车级 |
ADS120J040G2 |
SBD | 1200 | 20/40 @Tc=142℃ | Gen-2 | 1.45 | 2.2 | 180* | 50 | -55~175 | TO247-3 | 汽车级 |