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SiC Substrate & Epitaxy

Industry-leading flexibility and scale



High-Quality Silicon Carbide Substrate under Sanan IC Patents

With more than 20 years of experience in the development and manufacturing of compound semiconductor materials, Sanan IC delivers Silicon Carbide (SiC) substrates and epitaxy that meet the industry demand for low defectivity and uniformity.  Sanan IC offers both n- and p-type epitaxial layers grown on n-type conducting 150mm SiC substrates with sufficient capacity to meet the rapidly growing demand for SiC power semiconductors.  When you engage with Sanan IC, you will build upon the foundation of the best and most innovative wide bandgap materials.

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